PSMN013-100ES Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN013-100ES
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 3
junction to mounting
base
thermal resistance from vertical in free air
junction to ambient
Min Typ Max Unit
-
0.5 0.9 K/W
-
60
-
K/W
1
Zth (j-mb)
(K/W) ^{δ = 0.5}
10^-1 0.2
0.1
0.05
10^-2 0.02
10^{-3 s ingle s hot}
003aad575
P
δ = ^tp
T
10^-4
1e -6
10^-5
10^-4
10^-3
10^-2
10^-1
t_p
t
T
1
10
tp (s )
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN013-100ES_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
© NXP B.V. 2010. All rights reserved.
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