PSMN013-100ES Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN013-100ES
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
I_DM
P_tot
T_stg
T_j
T_sld(M)
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≤ 175 °C; T_j ≥ 25 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 100 °C; see Figure 1
V_GS = 10 V; T_mb = 25 °C; see Figure 1
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
T_mb = 25 °C; see Figure 2
Source-drain diode
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
E_DS(AL)S
non-repetitive
V_GS = 10 V; T_j(init) = 25 °C; I_D = 68 A; V_sup ≤ 100 V;
drain-source avalanche unclamped; R_GS = 50 Ω
energy
Min Max Unit
-
100 V
-
100 V
-20 20
V
-
47
A
-
68
A
-
272 A
-
170 W
-55 175 °C
-55 175 °C
-
260 °C
-
68
A
-
272 A
-
127 mJ
003aac512
80
120
I_D
(A)
P_der
(%)
60
80
40
40
20
03aa16
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN013-100ES_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
© NXP B.V. 2010. All rights reserved.
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