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| PSMN013-100ES Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK | |||
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NXP Semiconductors
PSMN013-100ES
N-channel 100 V 13.9 m⦠standard level MOSFET in I2PAK
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10 and 9
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 100 V; VGS = 0 V; Tj = 125 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12 and 11
RG
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 13 and 14
ID = 0 A; VDS = 0 V; VGS = 10 V
QGS
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 13 and 14
QGS(th)
pre-threshold
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 14
QGS(th-pl) post-threshold
gate-source charge
QGD
gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
see Figure 14 and 13
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; see Figure 14 and 13
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; see Figure 15
Crss
reverse transfer
capacitance
Min Typ Max Unit
90
-
-
V
100 -
-
V
1
-
-
V
2
3
4
V
-
-
4.8 V
-
-
100 µA
-
0.06 2
µA
-
10
100 nA
-
10
100 nA
-
30
38.9 mâ¦
-
-
25
mâ¦
-
11
13.9 mâ¦
-
1
-
â¦
-
59
-
nC
-
47.6 -
nC
-
13.8 -
nC
-
9.2 -
nC
-
4.6 -
nC
-
17
-
nC
-
4.4 -
V
-
3195 -
pF
-
221 -
pF
-
136 -
pF
PSMN013-100ES_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 19 February 2010
© NXP B.V. 2010. All rights reserved.
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