PSMN013-100ES Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK

PSMN013-100ES
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
Rev. 02 — 19 February 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
T_j
junction temperature
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
V_GS = 10 V; T_j(init) = 25 °C;
I_D = 68 A; V_sup ≤ 100 V;
unclamped; R_GS = 50 Ω
Q_GD
gate-drain charge V_GS = 10 V; I_D = 25 A;
V_DS = 50 V;
see Figure 14 and 13
Q_G(tot) total gate charge
V_GS = 10 V; I_D = 25 A;
V_DS = 50 V;
see Figure 13 and 14
Min Typ Max Unit
-
-
100 V
-
-
68 A
-
-
170 W
-55 -
175 °C
-
-
127 mJ
-
17 -
nC
-
59 -
nC