PSMN013-100ES Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN013-100ES
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
Table 6. Characteristics …continued
Symbol Parameter
Conditions
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
V_DS = 50 V; R_L = 2 Ω; V_GS = 10 V;
R_G(ext) = 4.7 Ω; T_j = 25 °C
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 50 V
Min Typ Max Unit
-
20.7 -
ns
-
25
-
ns
-
52.5 -
ns
-
24
-
ns
-
0.8 1.2 V
-
52
-
ns
-
109 -
nC
200
ID
(A)
160
120
80
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20 10
6
5.5
5
40
4.5
VGS (V) = 4
0
0
1
2
3
4
VDS (V)
5000
C
(p F )
4000
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Cis s
3000
Crs s
2000
1000
0
2
4
6
8
10
VGS (V)
Fig 4. Output characteristics: drain current as a
Fig 5. Input and reverse transfer capacitances as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
PSMN013-100ES_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
© NXP B.V. 2010. All rights reserved.
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