PSMN004-36B Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN004-36B
N-channel TrenchMOS SiliconMAX logic level FET
0.01
R_DS(on)
(Ω)
0.008
T_j = 25 °C
0.006
0.004
0.002
0
0
20
03ag46
V_GS = 2.6 V
2.8 V
5V
10 V
40
60
80
I_D = (A)
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
V_GS
(V)
8
I_D = 75 A
V_DD = 15 V
T_j = 25 °C
03ag50
10⁵
C
(pF)
03ag49
6
10⁴
4
C_iss
2
0
0
40
80
120
160
200
Q_G (nC)
10³
10^−1
1
C_oss
C_rss
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN004-36B_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
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