PSMN004-36B Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN004-36B
N-channel TrenchMOS SiliconMAX logic level FET
80
I_D
(A)
60
40
10 V 5 V 2.8 V
03ag45
2.6 V
T_j = 25 °C
2.4 V
80
I_D
(A)
V_DS > I_D × R_DS(on)
60
40
03ag47
20
0
0
2.2 V
V_GS = 2 V
0.2
0.4
0.6
0.8
1
V_DS (V)
20
0
−0.2
175 °C
T_j = 25 °C
0.6
1.4
2.2
3
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^-1
I_D
(A)
10^-2
03aa36
2.5
V_GS(th)
(V)
2
max
03aa33
10^-3
min
typ
max
10^-4
1.5
typ
1
min
10^-5
0.5
10^-6
0
1
2
3
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN004-36B_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
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