PSMN004-36B Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PSMN004-36B
N-channel TrenchMOS SiliconMAX logic level FET
Rev. 02 — 1 March 2010
Product data sheet
1. Product profile
1.1 General description
SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 5 V;
see Figure 1 and 3
-
-
36 V
-
-
75 A
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
230 W
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 5 V; I_D = 75 A; V_DS = 15 V; -
39 -
nC
T_j = 25 °C; see Figure 11
Static characteristics
R_DSon drain-source
V_GS = 10 V; I_D = 25 A; T_j = 25 °C; -
on-state resistance see Figure 9 and 10
3.5 4
mΩ
V_GS = 5 V; I_D = 25 A; T_j = 25 °C; -
see Figure 9 and 10
4
5
mΩ