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| PSMN004-36B Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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NXP Semiconductors
PSMN004-36B
N-channel TrenchMOS SiliconMAX logic level FET
103
ID
(A)
102
RDS(on) = VDS/ID
10
03ag44
tp = 10 μs
100 μs
1 ms
DC
10 ms
100 ms
1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN004-36B_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 1 March 2010
© NXP B.V. 2010. All rights reserved.
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