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| PSMN004-36B Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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NXP Semiconductors
PSMN004-36B
N-channel TrenchMOS SiliconMAX logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg
Tj
VGSM
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 5 V; Tmb = 100 °C; see Figure 1
VGS = 5 V; Tmb = 25 °C; see Figure 1 and 3
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
pulsed; δ = 25 %; tp ⤠50 µs; Tj ⤠150 °C
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 5 V; Tj(init) = 25 °C; ID = 75 A; Vsup = 15 V;
drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 â¦
energy
IAS
non-repetitive
Vsup = 15 V; VGS = 5 V; Tj(init) = 25 °C; RGS = 50 â¦;
avalanche current
unclamped
Min Max Unit
-
36
V
-
36
V
-15 15
V
-
75
A
-
75
A
-
240 A
-
230 W
-55 175 °C
-55 175 °C
-20 20
V
-
75
A
-
240 A
-
120 mJ
-
75
A
120
ID
(%)
80
03ag42
120
Pder
(%)
80
03aa16
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN004-36B_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 1 March 2010
© NXP B.V. 2010. All rights reserved.
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