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PSMN004-36B Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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NXP Semiconductors
PSMN004-36B
N-channel TrenchMOS SiliconMAX logic level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
mounted on a printed-circuit
board; minimum footprint
Min Typ Max Unit
-
-
0.65 K/W
-
-
50
K/W
1
03ag43
Zth j-mb
(K/W)
δ = 0.5
0.2
10−1
0.1
0.05
0.02
10−2
P
tp
δ=
T
single pulse
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
10−1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN004-36B_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
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