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| PSMN004-36B Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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NXP Semiconductors
PSMN004-36B
N-channel TrenchMOS SiliconMAX logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS drain-source
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
36
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
32
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 8 0.5
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 8 -
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 8 1
IDSS
drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
VDS = 30 V; VGS = 0 V; Tj = 175 °C
-
IGSS
gate leakage current VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9 -
resistance
and 10
VGS = 5 V; ID = 25 A; Tj = 175 °C; see Figure 9 -
and 10
VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 9 -
and 10
VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 9
-
and 10
Dynamic characteristics
QG(tot)
total gate charge
ID = 75 A; VDS = 15 V; VGS = 5 V; Tj = 25 °C;
-
QGS
gate-source charge
see Figure 11
-
QGD
gate-drain charge
-
Ciss
input capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
Coss
output capacitance
see Figure 12
-
Crss
reverse transfer
-
capacitance
td(on)
turn-on delay time
VDS = 15 V; RL = 1.2 â¦; VGS = 5 V;
-
tr
rise time
RG(ext) = 6 â¦; Tj = 25 °C
-
td(off)
turn-off delay time
-
tf
fall time
-
Source-drain diode
VSD
source-drain voltage IS = 75 A; VGS = 0 V; Tj = 25 °C; see Figure 13 -
IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 -
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
-
Typ Max Unit
-
-
V
-
-
V
-
-
V
-
2.3 V
1.5 2
V
0.05 10
µA
-
500 µA
1
100 nA
1
100 nA
3.5 4
mâ¦
-
9.25 mâ¦
-
5.4 mâ¦
4
5
mâ¦
97
-
nC
20
-
nC
39
-
nC
6000 -
pF
1700 -
pF
1400 -
pF
45
-
ns
220 -
ns
435 -
ns
320 -
ns
1.1 -
V
0.85 1.2 V
400 -
ns
1
-
µC
PSMN004-36B_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 1 March 2010
© NXP B.V. 2010. All rights reserved.
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