PIP213-12M Datasheet, PDF (8/21 Pages) NXP Semiconductors – DC-to-DC converter power train

NXP Semiconductors
PIP213-12M
DC-to-DC converter powertrain
11. Characteristics
Table 6. Characteristics
V_DDC = 12 V; T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Static characteristics
V_DDC
V_th(UVLO)
control circuit supply voltage
25 °C ≤ T_j ≤ 150 °C
undervoltage lockout threshold voltage turn on
turn off
4.5 12
4.05 4.2
3.7 3.9
V_th(CBP-CBN) threshold voltage between pin CBP
and pin CBN
turn on
turn off
3.85 4.1
2.35 2.6
V_IH
HIGH-level input voltage
V_IL
LOW-level input voltage
I_LI
input leakage current
I_DDC
control circuit supply current
V_DDG
V_REG5V
I_REG5V
V_th(en)
V_th(dis)
T_trip(otp)
gate driver supply voltage
voltage on pin REG5V
current on pin REG5V
enable threshold voltage
disable threshold voltage
over-temperature protection trip
temperature
[1] _{3.3 3.5}
[1] _{1.4 1.5}
0 V ≤ V_I ≤ 5 V
-
180
f_i = 0 Hz, V_I = 0 V
-
8.2
f_i = 500 kHz, VDDG_EN = open
-
40
f_i = 500 kHz, VDDG_EN = ground
-
12
I_L = 65 mA
5.75 6.5
I_L ≤ I_REG5V minimum, V_DDC > 7 V
4.5 5.0
V_REG5V = 4.5 V
18 -
on pin DISABLE, V_DDC > 4.5 V
2.9 3.2
on pin DISABLE, V_DDC > 4.5 V
1.4 1.6
-
160
T_trip(otp)hys hysteresis of over-temperature
protection trip temperature
-
40
P_tot
total power dissipation
Upper MOSFET
V_DDO = 12 V; I_O(AV) = 20 A;
V_O = 1.3 V; T_pcb = 90 °C;
f_i = 500 kHz
f_i = 1 MHz
-
4.7
-
5.5
R_DSon
drain-source on-state resistance
Lower MOSFET
I_O = 10 A; V_CBP = 12 V
-
6.5
R_DSon
drain-source on-state resistance
Dynamic characteristics
I_O = 10 A; V_DDG = 12 V
I_O = 10 A; V_DDG = 6.5 V
-
3.8
-
4.5
t_d(on)(IH-OH) turn-on delay time from input HIGH to V_DDO = 12 V; I_O(AV) = 12.5 A
output HIGH
-
-
t_{d(off)(IL-OL)} turn-off delay time from input LOW to
output LOW
-
-
t_d(3-state)
3-state delay time
-
90
Max Unit
14 V
4.45 V
4.1 V
4.35 V
2.85 V
3.7 V
1.6 V
-
µA
-
mA
-
mA
-
mA
7.25 V
5.5 V
-
mA
3.5 V
1.8 V
-
°C
-
°C
-
W
-
W
-
mΩ
-
mΩ
-
mΩ
80 ns
75 ns
-
ns
[1] If the input voltage remains between V_IH and V_IL (2.5 V typ) for longer than t_d(3-state), then both MOSFETs are turned off.
PIP213-12M_1
Product data sheet
Rev. 01 — 25 September 2007
© NXP B.V. 2007. All rights reserved.
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