BUK7619-100B Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7619-100B
N-channel TrenchMOS standard level FET
100
I_D
(A)
80
60
40
003aac040
10
V_GS
(V)
8
6
4
003aac041
V_DS (V) = 14
V_DS (V) = 80
20
0
0
T_j = 175 °C
T_j = 25 °C
2
4
6
V_GS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
2
0
0
20
40
60
Q_G (nC)
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
100
I_S
(A)
75
003aac042
10²
I_AL
(A)
003aab145
(1)
(2)
50
10
25
T_j = 175 °C
T_j = 25 °C
(3)
0
0.0
0.5
1.0
1.5
V_SD (V)
1
10^-3
10^-2
10^-1
1 _{tAL (ms)} 10
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
See Table note 1 of Table 3 Limiting values.
(1) Single-pulse; T_j = 25 °C.
(2) Single-pulse; T_j = 125 °C.
(3) Repetitive.
Fig 16. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK7619-100B_1
Product data sheet
Rev. 01 — 10 October 2007
© NXP B.V. 2007. All rights reserved.
8 of 12