BUK7619-100B Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7619-100B
N-channel TrenchMOS standard level FET
200
I_D
(A)
150
003aac043
V_GS (V) = 20V
15
10
8
7
30
R_DSon
(mΩ)
25
003aac044
100
6
20
5.5
50
5
4.5
0
0
2
4
6
8
10
V_DS (V)
15
10
0
5
10
15
20
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
T_j = 25 °C; I_D = 10 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
50
003aac045
2.8
R_DSon
5.5
6
6.5 8
(mΩ)
a
40 V_GS (V) = 5
2.1
10
30
20
1.4
20
0.7
10
03ng41
0
0
40
T_j = 25 °C
80
120
160
200
I_D (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
0
-60
0
60
120
180
T_j (°C)
a = -_R---_D----^R_S---_o-^D--_n--^S₍--_2o--₅-ⁿ--_°--_C----₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7619-100B_1
Product data sheet
Rev. 01 — 10 October 2007
© NXP B.V. 2007. All rights reserved.
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