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BUK7619-100B Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK7619-100B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and10
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
IDSS
drain leakage current
VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
IGSS
gate leakage current
VGS = ±20 V; VDS = 0 V
RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
Dynamic characteristics
QG(tot) total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 25 A; VDD = 80 V; VGS = 10 V;
see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
IS = 25 A; VGS = 0 V; see Figure 15
IS = 20 A; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
Min Typ Max Unit
100 -
-
V
89 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
0.02 1
µA
-
-
500 µA
-
2
100 nA
-
17 19 mΩ
-
-
49 mΩ
-
53 -
nC
-
11 -
nC
-
27 -
nC
-
2555 3400 pF
-
340 480 pF
-
84 115 pF
-
19 -
ns
-
45 -
ns
-
85 -
ns
-
34 -
ns
-
0.85 1.2 V
-
116 -
ns
-
130 -
nC
BUK7619-100B_1
Product data sheet
Rev. 01 — 10 October 2007
© NXP B.V. 2007. All rights reserved.
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