BUK7619-100B Datasheet, PDF(1/12 Page) NXP Semiconductors – N-channel TrenchMOS standard level FET

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BUK7619-100B Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7619-100B

N-channel TrenchMOS standard level FET

Rev. 01 â 10 October 2007

Product data sheet

1. Product proï¬le

1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package

using NXP High Performance Automotive (HPA) TrenchMOS technology.

1.2 Features

I TrenchMOS technology

I 175 Â°C rated

I Q101 compliant

I Standard level compatible

1.3 Applications

I Automotive systems

I Motors, lamps and solenoids

I General purpose power switching

I 12 V, 24 V and 42 V loads.

1.4 Quick reference data

I EDS(AL)S â¤ 222 mJ

I ID â¤ 64 A

I RDSon = 17 mâ¦ (typ)

I Ptot â¤ 200 W

2. Pinning information

Table 1.

Pinning

Description

gate (G)

drain (D)

source (S)

mounting base; connected to drain (D)

Simpliï¬ed outline

Symbol

SOT404 (D2PAK)

mbb076 S

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