BUK7619-100B Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7619-100B
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
max
typ
min
03aa32
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
03aa35
min typ max
0
−60
0
60
120
180
T_j (°C)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10^−6
0
2
4
6
V_GS (V)
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
80
g_fs
(S)
60
003aac039
4000
C
(pF)
3000
003aac038
C_iss
40
20
0
0
20
40
60
I_D (A)
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values
2000
1000
C_oss
C_rss
0
10^-1
1
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7619-100B_1
Product data sheet
Rev. 01 — 10 October 2007
© NXP B.V. 2007. All rights reserved.
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