BUK7619-100B Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7619-100B
N-channel TrenchMOS standard level FET
120
P_der
(%)
80
40
03na19
80
I_D
(A)
60
40
20
003aab142
0
0
50
100
150
200
T_mb (°C)
P_der = _P----_t--_o--^P-_t-₍--^t2-^o--₅-^t-_°---_C---₎ × 100 %
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
10³
I_D
Limit R_DSon = V_DS / I_D
(A)
10²
10
DC
1
0
0
50
V_GS ≥ 10 V
100
150
200
T_mb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature
003aab143
t_p = 10 µ s
100 µs
1 ms
10 ms
100 ms
10^-1
1
10
10²
V_DS (V)
10³
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7619-100B_1
Product data sheet
Rev. 01 — 10 October 2007
© NXP B.V. 2007. All rights reserved.
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