BUK7619-100B Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7619-100B
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
BUK7619-100B
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3-leads (one
lead cropped)
4. Limiting values
Version
SOT404
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
R_GS = 20 kΩ
T_sp = 25 °C; V_GS = 10 V; see Figure 2 and 3
T_sp = 100 °C; V_GS = 10 V; see Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 3
T_mb = 25 °C; see Figure 1
I_DR
reverse drain current
I_DRM
peak reverse drain current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
E_DS(AL)S
E_DS(AL)R
non-repetitive drain-source avalanche
energy
repetitive drain-source avalanche
energy
unclamped inductive load; I_D = 64 A;
V_DS ≤ 100 V; R_GS = 50 Ω; V_GS = 10 V; starting
at T_j = 25 °C
[1] Conditions:
a) Maximum value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by T_j(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
d) Refer to application note AN10273 for further information.
Min Max Unit
- 100 V
- 100 V
- ±20 V
- 64 A
- 45 A
- 256 A
- 200 W
−55 +175 °C
−55 +175 °C
- 64 A
- 256 A
- 222 mJ
[1] _-
-
mJ
BUK7619-100B_1
Product data sheet
Rev. 01 — 10 October 2007
© NXP B.V. 2007. All rights reserved.
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