BUK75 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK75/7608-40B
N-channel TrenchMOS standard level FET
100
I_D
(A)
75
50
25
003aac074
T_j = 175 °C
25 °C
10
V_GS
(V)
8
6
4
2
003aac072
V_DD = 14 V
V_DD = 32 V
0
0
2
4
6
8
V_GS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
0
10
20
30
40
Q_G (nC)
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
100
I_S
(A)
75
003aac071
50
25
T_j = 175 °C
25 °C
0
0.0
0.3
0.6
0.9
1.2
V_SD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK75_7608-40B_2
Product data sheet
Rev. 02 — 16 November 2007
© NXP B.V. 2007. All rights reserved.
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