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BUK75 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
BUK75/7608-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 16 November 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance
I 175 °C rated
I Q101 compliant
I Standard level compatible
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V loads
1.4 Quick reference data
I EDS(AL)S ≤ 241 mJ
I ID ≤ 75 A
I RDSon = 6.6 mΩ (typ)
I Ptot ≤ 157 W
2. Pinning information
Table 1. Pinning - SOT78 and SOT404, simplified outlines and symbol
Pin Description
Simplified outline
1
Gate (G)
2
Drain (D)
[1]
mb
mb
3
Source (S)
mb mounting base,
connected to
drain (D)
2
13
SOT404 (D2PAK)
Symbol
D
G
mbb076 S
123
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package.