BUK75 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK75/7608-40B
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
Version
BUK7508-40B TO-220AB plastic single-ended package; heat sink mounted; 1 mounting hole; 3-leads SOT78A
BUK7608-40B
D2PAK
plastic single-ended surface mounted package (D2PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 2 and 3
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_DR
reverse drain current
T_mb = 100 °C; V_GS = 10 V; see Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 3
T_mb = 25 °C; see Figure 1
T_mb = 25 °C
I_DRM
peak reverse drain current
Avalanche ruggedness
E_DS(AL)S non-repetitive drain-source
avalanche energy
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
unclamped inductive load; I_D = 75 A; V_DS ≤ 40 V;
V_GS = 10 V; R_GS = 50 Ω; starting at T_mb = 25 °C
Min
-
-
-
[1] _-
[2] _-
[1] _-
-
-
−55
−55
[1] _-
[2] _-
-
-
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
40
V
40
V
±20
V
101
A
75
A
71
A
407
A
157
W
+175 °C
+175 °C
101
A
75
A
407
A
241
mJ
BUK75_7608-40B_2
Product data sheet
Rev. 02 — 16 November 2007
© NXP B.V. 2007. All rights reserved.
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