BUK75 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
120
P_der
(%)
80
40
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BUK75/7608-40B
N-channel TrenchMOS standard level FET
120
I_D
(A)
80
(1)
40
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0
0
50
100
150
200
T_mb (°C)
P_der
=
--------^P----^t-^o---^t-------
P _{t o t ( 25 ° C )}
×
100
%
Fig 1. Normalized total power dissipation as a
function of solder point temperature
0
0
50
100
150
200
T_mb (°C)
V_GS ≥ 10 V
[1] Capped at 75 A due to package.
Fig 2. Continuous drain current as a function of
mounting base temperature
10³
I_D
(A)
10²
10
Limit R_DSon = V_DS / I_D
(1)
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t_p = 10 µs
100 µs
1 ms
10 ms
1
10^−1
1
100 ms
DC
10
10²
V_DS (V)
T_mb = 25 °C; I_DM is single pulse.
[1] Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK75_7608-40B_2
Product data sheet
Rev. 02 — 16 November 2007
© NXP B.V. 2007. All rights reserved.
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