BUK75 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK75/7608-40B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V_(BR)DSS drain-source breakdown
voltage
V_GS(th) gate-source threshold voltage
I_DSS
drain leakage current
I_GSS
R_DSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
Q_G(tot)
Q_GS
Q_GD
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
L_D
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
L_S
internal source inductance
Source-drain diode
Conditions
I_D = 250 µA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
I_D = 1 mA; V_DS = V_GS; see Figure 9 and 10
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 40 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±20 V; V_DS = 0 V
V_GS = 10 V; I_D =25 A; see Figure 6 and 8
T_j = 25 °C
T_j = 175 °C
I_D = 25 A; V_DD = 32 V; V_GS = 10 V;
see Figure 14
V_GS = 0 V; V_DS = 25 V; f = 1 MHz;
see Figure 12
V_DD = 30 V; R_L = 1.2 Ω;
V_GS = 10 V; R_G = 10 Ω
from drain lead 6 mm from
package to center of die
from contact screw on
mounting base to center of die
SOT78
from upper edge of drain
mounting base to center of die
SOT404
from source lead 6 mm from
package to source bond pad
Min Typ Max Unit
40 -
-
V
36 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
0.02 1
µA
-
-
500 µA
-
2
100 nA
-
6.6 8
mΩ
-
-
15.2 mΩ
-
36 -
nC
-
9
-
nC
-
12 -
nC
-
2017 2689 pF
-
486 583 pF
-
213 291 pF
-
20 -
ns
-
51 -
ns
-
20 -
ns
-
33 -
ns
-
4,5 -
nH
-
3.5
nH
-
2.5 -
nH
-
7.5 -
nH
BUK75_7608-40B_2
Product data sheet
Rev. 02 — 16 November 2007
© NXP B.V. 2007. All rights reserved.
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