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BUK75 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK75/7608-40B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter
Rth(j-mb) thermal resistance from junction to mounting
base
Rth(j-a) thermal resistance from junction to ambient
Conditions
see Figure 4
[1] Vertical in still air; SOT78 package.
[2] mounted on a printed circuit board; minimum footprint; SOT404 package
Min Typ Max Unit
-
-
0.95 K/W
[1] -
[2] -
60 -
50 -
K/W
K/W
1
Zth(j − mb) δ = 0.5
(K / W)
0.2
10−1 0.1
0.05
0.02
10−2 single pulse
003aac080
P
tp
δ=
T
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
10−1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting bast as a function of pulse duration
BUK75_7608-40B_2
Product data sheet
Rev. 02 — 16 November 2007
© NXP B.V. 2007. All rights reserved.
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