BUK75 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK75/7608-40B
N-channel TrenchMOS standard level FET
Table 5. Characteristics …continued
T_j = 25 °C unless otherwise specified.
Symbol Parameter
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V; see Figure 15
I_S = 20 A; dI_S/dt = −100 A/µs;
V_GS = −10 V; V_DS = 20 V
Min Typ Max Unit
-
0.85 1.2 V
-
53 -
ns
-
44 -
nC
300
20
I_D
(A)
14
12
200
100
0
0
2
V_GS (V) = 10
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4
6
003aac076
8
10
V_DS (V)
14
R_DSon
(mΩ)
12
10
8
6
4
5
003aac075
10
15
20
V_GS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
16
R_DSon
(mΩ)
6.0 6.5 7.0
12
003aac077
8.0
V_GS (V) = 10
2
a
1.5
003aab851
1
8
0.5
20
4
0
100
T_j = 25 °C
200
300
I_D (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
−60
0
60
120
180
T_j (°C)
a = --------^R----^D----^S--^o---ⁿ--------
R _{D S o n ( 25 ° C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK75_7608-40B_2
Product data sheet
Rev. 02 — 16 November 2007
© NXP B.V. 2007. All rights reserved.
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