PSMN025-100D Datasheet, PDF (7/11 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN025-100D
N-channel TrenchMOS SiliconMAX standard level FET
Gate-source voltage, VGS (V)
15
14 ID = 45 A
13
12
Tj = 25 C
11
VDD = 20 V
10
9
8
7
6
5
4
3
2
1
0
VDD = 80 V
lma027
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
Gate charge, QG (nC)
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
100
lma026
Ciss
Coss
Crss
10
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig 12. Gate-source voltage as a function of gate
charge; typical values
Drain current, ID (A)
50
45 ^{VDS > ID X RDS(ON)}
40
35
30
25
20
15
175 C
10
5
0
0
1
2
3
4
Gate-source voltage, VGS (V)
lma021
Tj = 25 C
5
6
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Source-Drain Diode Current, IF (A)
50
VGS = 0 V
45
lma028
40
35
30
175 C
25
Tj = 25 C
20
15
10
5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Fig 14. Transfer characteristics: drain current as a
Fig 15. Source current as a function of source-drain
function of gate-source voltage; typical values
voltage; typical values
PSMN025-100D_3
Product data sheet
Rev. 03 — 20 November 2008
© NXP B.V. 2008. All rights reserved.
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