PSMN025-100D Datasheet, PDF (6/11 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN025-100D
N-channel TrenchMOS SiliconMAX standard level FET
Drain Current, ID (A)
40
VGS = 10V
35
8V
6V
30
lma019
Tj = 25 C
25
20
15
10
5
0
0
5V
4.8 V
4.6 V
4.4 V
4V
4.2 V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Transconductance, gfs (S)
50
VDS > ID X RDS(ON)
45
40
Tj = 25 C
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35
Drain current, ID (A)
lma022
175 C
40 45 50
Fig 7. Forward transconductance as a function of
drain current; typical values
Threshold Voltage, VGS(TO) (V)
4.5
lma024
4
maximum
3.5
3
typical
2.5
2
minimum
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Drain current, ID (A)
1.0E-01
lma025
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
Fig 8. Gate-source threshold voltage as a function of _{Fig 9. Sub-threshold drain current as a function of}
junction temperature
gate-source voltage
Normalised On-state Resistance
2.9
lma023
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Drain-Source On Resistance, RDS(on) (Ohms)
0.16
4.2 V
4.4 V
4.6 V
4.8 V
0.14 4 V
lma020
Tj = 25 C
0.12
0.1
5V
0.08
0.06
0.04
8 V 6V
0.02
VGS = 10V
0
0 2 4 6 8 10 12 14 16 18 20
Drain Current, ID (A)
Fig 10. Normalized drain source on-state resistance
factor as a function of junction temperature
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
PSMN025-100D_3
Product data sheet
Rev. 03 — 20 November 2008
© NXP B.V. 2008. All rights reserved.
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