PSMN025-100D Datasheet, PDF (2/11 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN025-100D
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Simplified outline
mb
[1]
2
1
3
SOT428
(SC-63; DPAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PSMN025-100D SC-63;
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
4. Limiting values
Version
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≤ 175 °C; T_j ≥ 25 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 100 °C; see Figure 1
V_GS = 10 V; T_mb = 25 °C; see Figure 1; see Figure 2
pulsed; T_mb = 25 °C; see Figure 2
T_mb = 25 °C; see Figure 3
I_S
source current
T_mb = 25 °C
I_SM
peak source current pulsed; T_mb = 25 °C
Min Max Unit
-
100 V
-
100 V
-20 20
V
-
33
A
-
47
A
-
188 A
-
150 W
-55 175 °C
-55 175 °C
-
47
A
-
188 A
PSMN025-100D_3
Product data sheet
Rev. 03 — 20 November 2008
© NXP B.V. 2008. All rights reserved.
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