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PSMN025-100D Datasheet, PDF (5/11 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET
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NXP Semiconductors
PSMN025-100D
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 8
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 8; see Figure 9
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 8
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C; see
Figure 10
VGS = 10 V; ID = 25 A; Tj = 25 °C; see
Figure 10; see Figure 11
ID = 45 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; see Figure 12
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
VDS = 50 V; RL = 1.8 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
measured from tab to centre of die;
Tj = 25 °C
measured from source lead to source
bond pad; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C; see
Figure 15
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
89
-
-
V
100 -
-
V
1
-
-
V
2
3
4
V
-
-
6
V
-
0.05 10
µA
-
-
500 µA
-
0.02 100 nA
-
0.02 100 nA
-
-
68
mΩ
-
22
25
mΩ
-
61
-
nC
-
13
-
nC
-
25
-
nC
-
2600 -
pF
-
340 -
pF
-
195 -
pF
-
18
-
ns
-
72
-
ns
-
69
-
ns
-
58
-
ns
-
3.5 -
nH
-
7.5 -
nH
-
0.87 1.2 V
-
82
-
ns
-
0.26 -
µC
PSMN025-100D_3
Product data sheet
Rev. 03 — 20 November 2008
© NXP B.V. 2008. All rights reserved.
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