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PSMN025-100D Datasheet, PDF (1/11 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET | |||
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PSMN025-100D
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 03 â 20 November 2008
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Higher operating power due to low
thermal resistance
 Low conduction losses due to low
on-state resistance
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 DC-to-DC converters
 Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1; see Figure 2
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 3
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 45 A;
VDS = 80 V; Tj = 25 °C; see
Figure 12
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 10;
see Figure 11
Min Typ Max Unit
-
-
100 V
-
-
47 A
-
-
150 W
-
25 -
nC
-
22 25 mâ¦
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