PSMN025-100D Datasheet, PDF (4/11 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN025-100D
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-a)
R_th(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from SOT428 package; printed-circuit board
junction to ambient
mounted; minimum footprint
thermal resistance from see Figure 5
junction to mounting
base
Min Typ Max Unit
-
50
-
K/W
-
-
1
K/W
Transient thermal impedance, Zth j-mb (K/W)
1
D = 0.5
lma018
0.2
0.1 ^0.1
0.05
0.02
0.01
single pulse
P
D
D = tp/T
tp
Fig 5.
0.001
1E-06
1E-05
T
1E-04 1E-03 1E-02
Pulse width, tp (s)
1E-01
1E+00
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN025-100D_3
Product data sheet
Rev. 03 — 20 November 2008
© NXP B.V. 2008. All rights reserved.
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