PSMN013-30LL Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V 13 mΩ logic level MOSFET

NXP Semiconductors
50
R_DSon
(mΩ)
40
30
20
10
0
0
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V_GS(V) = 2.8 3.0
3.5
4.0
4.5
10
5
10
15
20
I _D (A)
PSMN013-30LL _N-channel
V_DS
V_GS(pl)
I³_D ^{0DRVAF1T3DmRADΩFRTAloDFTRgADicFRTDAlDeRFTRAvAFDeTFRlTADMDFRTORDAARFDSTFARFTFADTEDFRTRDATARDFTFDARTRFADTADFRTFRDATADRF}
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 12. Gate charge waveform definitions
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
10
V_GS
(V)
7.5
5
24V
6V
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V_DS= 15V
10³
C
(pF)
10²
2.5
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C_iss
C_oss
C_rss
0
0
5
10
15
Q_G (nC)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
10
10^-1
1
10
10²
V_DS(V)
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN013-30LL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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