PSMN013-30LL Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 30 V 13 mΩ logic level MOSFET

NXP Semiconductors
20
I_D
(A)
15
10 4.54.03.5
10
003aae187
3.0
2.8
2.6
5
2.4
V_GS(V) = 2.2
0
0
0.25
0.5
0.75
1
V_DS(V)
PSMN013-30LL ₃
VGS (th)
(V)
2
N-channel
30D_m^RV_a^A_x^F1T3DmRADΩ^{FRTAloDFTRgADicFR}_0T0^DAl_3DeRFaTRAv_{a cAFDe3}^TFRl_{3T7ADMDFRTORDAARFDSTFARFTFADTEDFRTRDATARDFTFDARTRFADTADFRTFRDATADRF}
typ
min
1
0
-6 0
0
60
120
180
Tj (°C)
Fig 7. Output characteristics: drain current as a
Fig 8. Gate-source threshold voltage as a function of
function of drain-source voltage; typical values
junction temperature
10^-1
003aab271
2
I_D
(A)
a
10^-2
1.5
min
typ
max
10^-3
1
10^-4
03aa27
0.5
10^-5
10^-6
0
1
2 V_GS (V) 3
0
−60
0
60
120 _{Tj (°C)} 180
Fig 9. Sub-threshold drain current as a function of
gate-source voltage
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN013-30LL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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