PSMN013-30LL Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 30 V 13 mΩ logic level MOSFET

NXP Semiconductors
40
g_fs
(S)
30
20
10
003aae189
PSMN013-30LL ₂₀
I_D
(A)
15
N-channel 30DRVAF1T3DmRADΩ^{FRTAloDFTRgADicFR}_0T0^DAl_3DeRFaT_aRAveAFDe1^T_{8FRl8TADMDFRTORDAARFDSTFARFTFADTEDFRTRDATARDFTFDARTRFADTADFRTFRDATADRF}
10
T_j = 150 °C T_j = 25 °C
5
0
0
5
10
15
20
25
I_D (A)
0
0
1
2
3
4
V_GS(V)
Fig 3. Forward transconductance as a function of
drain current; typical values
1500
C
(pF)
1000
003aae190
C_iss
C_rss
500
0
0
3
6
9
12
V_GS(V)
Fig 4. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
30
R_DSon
(mΩ)
25
003aae193
20
15
10
5
0
5
10
15
20
V_GS(V)
Fig 5. Input and reverse transfer capacitances as a
Fig 6. Drain-source on-state resistance as a function
function of gate-source voltage, typical values
of gate-source voltage; typical values
PSMN013-30LL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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