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| PSMN013-30LL Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 30 V 13 mΩ logic level MOSFET | |||
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NXP Semiconductors
50
ID
(A)
40
30
20
10
0
0
003aae184
(1)
50
100
150
200
Tmb (°C)
PSMN013-30LL 120
Pder
(%)
80
N-channel 30DRVAF1T3DmRADâ¦FRTAloDFTRgADicFR0T0DAl3DeRFaaTRAvbAF9De3TFRl7TADMDFRTORDAARFDSTFARFTFADTEDFRTRDATARDFTFDARTRFADTADFRTFRDATADRF
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of solder point temperature
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to mounting
base
6. Characteristics
Min Typ Max Unit
-
[tbd] [tbd] K/W
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 150 °C; see
Figure 8
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 8 and 9
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 8
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
Min Typ Max Unit
27
-
30
-
0.65 -
1.3 1.7
-
-
-
-
-
10
-
10
-
V
-
V
-
V
2.15 V
2.45 V
1
µA
100 nA
100 nA
PSMN013-30LL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 18 February 2010
© NXP B.V. 2010. All rights reserved.
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