PSMN013-30LL Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 30 V 13 mΩ logic level MOSFET

1.
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designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Small footprint for compact designs
„ Suitable for logic level gate drive
sources
1.3 Applications
„ Battery protection
„ DC-to-DC converters
„ Load switching
„ Power ORing
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
T_j
junction temperature
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 8 A;
V_DS = 15 V; see Figure 12
and 13
Static characteristics
R_DSon drain-source
on-state resistance
Avalanche ruggedness
V_GS = 10 V; I_D = 7.5 A;
T_j = 100 °C; see Figure 10
V_GS = 10 V; I_D = 7.5 A;
T_j = 25 °C; see Figure 11
E_DS(AL)S non-repetitive
drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C;
I_D = 40 A; V_sup ≤ 30 V;
unclamped; R_GS = 50 Ω
Min Typ Max Unit
-
-
30 V
-
-
21 A
-
-
41 W
-55 -
150 °C
-
1.7 -
nC
-
12.2 -
nC
-
-
17.9 mΩ
-
11 13 mΩ
-
-
13 mJ