PMF370XN Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel mTrenchMOS extremely low level FET

NXP Semiconductors
PMF370XN
N-channel TrenchMOS extremely low level FET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
5
V_GS
(V)
4
I_D = 1 A
T_j = 25 °C
V_DS = 15 V
3
2
1
0
0
0.2
0.4
I_D = 1 A;V_DS = 15V
03ao05
0.6
0.8
Q_G (nC)
Fig 11. Gate charge waveform definitions
10²
03ao04
C
C_iss
(pF)
10
C_oss
C_rss
1
10^−1
1
V_GS = 0V ; f = 1M H z
10
10²
V_DS (V)
Fig 12. Gate-source voltage as a function of gate
charge; typical values
1
I_S
(A)
V_GS = 0 V
0.8
03ao03
0.6
0.4
0.2
0
0
150 °C
0.2
0.4
0.6
T _j = 25°C and 150°C;V_GS = 0V
T_j = 25 °C
0.8
1
V_SD (V)
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 14. Source current as a function of source-drain
voltage; typical values
PMF370XN_3
Product data sheet
Rev. 03 — 20 June 2008
© NXP B.V. 2008. All rights reserved.
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