PMF370XN Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel mTrenchMOS extremely low level FET

NXP Semiconductors
PMF370XN
N-channel TrenchMOS extremely low level FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance see Figure 4
from junction to solder
point
Min
Typ
Max
Unit
-
-
220
K/W
10³
Z_th(j-sp)
(K/W)
10^{2 δ = 0.5}
0.2
0.1
0.05
0.02
10
single pulse
1
10^-4
10^-3
10^-2
10^-1
03an27
P
δ = ^tp
T
t_p
t
T
1
10
t_p (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Typ
Static characteristics
V_(BR)DSS
drain-source
I_D = 1 μA; V_GS = 0 V; T_j = -55 °C
27
-
breakdown voltage _{ID = 1 μA; VGS = 0 V; Tj = 25 °C}
30
-
V_GS(th)
gate-source threshold I_D = 0.25 mA; V_DS = V_GS;
voltage
T_j = -55 °C; see Figure 7
-
-
I_D = 0.25 mA; V_DS = V_GS;
T_j = 150 °C; see Figure 7 and 8
0.35
-
I_D = 0.25 mA; V_DS = V_GS;
T_j = 25 °C; see Figure 7 and 8
0.5
1
I_DSS
drain leakage current V_DS = 30 V; V_GS = 0 V; T_j = 25 °C
-
-
V_DS = 30 V; V_GS = 0 V; T_j = 70 °C
-
-
V_DS = 30 V; V_GS = 0 V;
T_j = 150 °C
-
-
I_GSS
gate leakage current V_GS = 12 V; V_DS = 0 V; T_j = 25 °C
-
10
V_GS = -12 V; V_DS = 0 V;
T_j = 25 °C
-
10
PMF370XN_3
Product data sheet
Rev. 03 — 20 June 2008
Max
Unit
-
V
-
V
1.8
V
-
V
1.5
V
1
μA
2
μA
10
μA
100
nA
100
nA
© NXP B.V. 2008. All rights reserved.
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