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| PMF370XN Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel mTrenchMOS extremely low level FET | |||
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NXP Semiconductors
PMF370XN
N-channel TrenchMOS extremely low level FET
Table 6. Characteristics â¦continued
Symbol Parameter
Conditions
Min
RDSon
drain-source on-state VGS = 2.5 V; ID = 0.1 A;
-
resistance
Tj = 25 °C; see Figure 9 and 10
VGS = 4.5 V; ID = 0.2 A;
-
Tj = 150 °C; see Figure 10
VGS = 4.5 V; ID = 0.2 A;
-
Tj = 25 °C; see Figure 9 and 10
Dynamic characteristics
QG(tot)
total gate charge
ID = 1 A; VDS = 15 V;
-
QGS
gate-source charge
VGS = 4.5 V; Tj = 25 °C;
see Figure 11 and 12
-
QGD
gate-drain charge
-
Ciss
input capacitance
VDS = 25 V; VGS = 0 V;
-
Coss
output capacitance
f = 1 MHz; Tj = 25 °C;
see Figure 13
-
Crss
reverse transfer
-
capacitance
td(on)
turn-on delay time
RG(ext) = 6 Ω; RL = 15 Ω;
-
tr
rise time
VDS = 15 V; VGS = 4.5 V;
Tj = 25 °C
-
td(off)
turn-off delay time
-
tf
fall time
-
Source-drain diode
VSD
source-drain voltage IS = 0.3 A; VGS = 0 V; Tj = 25 °C;
-
see Figure 14
Typ
Max
Unit
550
650
mΩ
629
748
mΩ
370
440
mΩ
0.65
-
nC
0.14
-
nC
0.18
-
nC
37
-
pF
8.5
-
pF
5.5
-
pF
6.5
-
ns
9.5
-
ns
14
-
ns
5.5
-
ns
0.81
1.2
V
2.5
ID
(A)
2
VGS (V) = 4.5
1.5
1
0.5
0
0
0.5
1
T j = 25°C
03ao00
3.5
3
2.5
2
1.8
1.5
2
VDS (V)
2.5
ID
(X)
2
03ao02
25 °C
Tj = 150 °C
1.5
1
0.5
0
0
1
2
3
4
5
VGS (V)
T j = 25°C and 150°C;VDS > ID à RDSon
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
PMF370XN_3
Product data sheet
Rev. 03 â 20 June 2008
© NXP B.V. 2008. All rights reserved.
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