PMF370XN Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel mTrenchMOS extremely low level FET

PMF370XN
N-channel TrenchMOS extremely low level FET
Rev. 03 — 20 June 2008
Product data sheet
1. Product profile
1.1 General description
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
„ Low threshold voltage
on-state resistance
„ Saves PCB space due to small footprint „ Suitable for low gate drive sources
(40 % smaller than SOT23)
„ Surface-mounted package
1.3 Applications
„ Driver circuits
„ Switching in portable appliances
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
Static characteristics
R_DSon drain-source on-state
resistance
Conditions
T_j ≥ 25 °C; T_j ≤ 150 °C
T_sp = 25 °C; V_GS = 4.5 V;
see Figure 1 and 3
T_sp = 25 °C; see Figure 2
V_GS = 4.5 V; I_D = 0.2 A;
T_j = 25 °C; see Figure 9 and
10
Min Typ Max Unit
-
-
30 V
-
-
0.87 A
-
-
0.56 W
-
370 440 mΩ