PMF370XN Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel mTrenchMOS extremely low level FET

NXP Semiconductors
PMF370XN
N-channel TrenchMOS extremely low level FET
2
V_{GS (th)}
(V)
1.5
1
0.5
03al82
max
typ
min
10^−3
I_D
(A)
10^−4
03an65
min
typ
max
10^−5
0
−60
0
60
I_D = 0.25 A;V_DS = V_GS
120
180
T_j (°C)
10^−6
0
0.4
0.8
T _j = 25°C;V_DS = 5V
1.2
1.6
V_GS (V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Subthreshold drain current as a function of
junction temperature
gate-source voltage
1
R_DSon
(Ω)
0.8
V_GS (V) = 2.5
03ao01
3
1.8
a
03al00
3.5
1.2
0.6
4.5
0.4
0.6
0.2
0
0
0.5
1
1.5
2
2.5
I_D (A)
T _j = 25°C
0
−60
0
60
a=
R _{DS o n}
R _{DS o n(25°C )}
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
PMF370XN_3
Product data sheet
Rev. 03 — 20 June 2008
© NXP B.V. 2008. All rights reserved.
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