PMF370XN Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel mTrenchMOS extremely low level FET

NXP Semiconductors
120
I_der
(%)
80
03aa25
PMF370XN
N-channel TrenchMOS extremely low level FET
120
P_der
(%)
80
03aa17
40
40
0
0
50
100
I_{d e r}
=
I_D
I_D(25°C)
× 100 %
150
200
T_sp (°C)
Fig 1. Normalized continuous drain current as a
function of solder point temperature
10
I_D
(A)
1
Limit R_DSon = V_DS / I_D
10^-1
10^-2
10^-1
1
T_{s p} = 25°C; I_DM is single pulse;V_GS = 4.5V
0
0
50
100
P_der =
P_tot
P _{t o t (25°C )}
× 100 %
150
200
T_sp (°C)
Fig 2. Normalized total power dissipation as a
function of solder point temperature
03an15
DC
10
t_p = 10 μ s
100 μs
1 ms
10 ms
100 ms
10²
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMF370XN_3
Product data sheet
Rev. 03 — 20 June 2008
© NXP B.V. 2008. All rights reserved.
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