PMF370XN Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel mTrenchMOS extremely low level FET

NXP Semiconductors
PMF370XN
N-channel TrenchMOS extremely low level FET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol
G
S
D
Description
gate
source
drain
3. Ordering information
Simplified outline
3
1
2
SOT323 (SC-70)
Table 3. Ordering information
Type number
Package
Name
Description
PMF370XN
SC-70
plastic surface-mounted package; 3 leads
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_j ≥ 25 °C; T_j ≤ 150 °C
T_j ≤ 150 °C; T_j ≥ 25 °C; R_GS = 20 kΩ
T_sp = 25 °C; V_GS = 4.5 V; see Figure 1 and 3
T_sp = 100 °C; V_GS = 4.5 V; see Figure 1
T_sp = 25 °C; t_p ≤ 10 μs; pulsed; see Figure 3
T_sp = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
T_sp = 25 °C
T_sp = 25 °C; t_p ≤ 10 μs; pulsed
Graphic symbol
D
G
mbb076 S
Version
SOT323
Min
Max
Unit
-
30
V
-
30
V
-12
12
V
-
0.87
A
-
0.55
A
-
1.74
A
-
0.56
W
-55
150
°C
-55
150
°C
-
0.47
A
-
0.94
A
PMF370XN_3
Product data sheet
Rev. 03 — 20 June 2008
© NXP B.V. 2008. All rights reserved.
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