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PDTB123E Datasheet, PDF (7/10 Pages) NXP Semiconductors – PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
NXP Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
9. Packing information
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000 5000 10000
PDTB123EK SOT346
4 mm pitch, 8 mm tape and reel -115 -
-135
PDTB123ES SOT54
bulk, straight leads
-
-412 -
SOT54A
tape and reel, wide pitch
-
-
-116
tape ammopack, wide pitch
-
-
-126
SOT54 variant bulk, delta pinning
-
-112 -
PDTB123ET SOT23
4 mm pitch, 8 mm tape and reel -215 -
-235
[1] For further information and the availability of packing methods, see Section 12.
PDTB123E_SER_2
Product data sheet
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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