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PDTB123E Datasheet, PDF (4/10 Pages) NXP Semiconductors – PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ | |||
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NXP Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
SOT346
SOT54
SOT23
Min Typ Max
[1]
-
-
500
-
-
250
-
-
500
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
K/W
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = â40 V; IE = 0 A
current
VCB = â50 V; IE = 0 A
ICEO
collector-emitter
cut-off current
VCE = â50 V; IB = 0 A
IEBO
emitter-base cut-off VEB = â5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = â5 V; IC = â50 mA
IC = â50 mA; IB = â2.5 mA
VI(off)
off-state input
voltage
VCE = â5 V; IC = â100 μA
VI(on)
on-state input
voltage
VCE = â0.3 V;
IC = â20 mA
R1
bias resistor 1 (input)
R2/R1 bias resistor ratio
Cc
collector capacitance VCB = â10 V; IE = ie = 0 A;
f = 100 MHz
Min Typ Max Unit
-
-
â100 nA
-
-
â100 nA
-
-
â0.5 μA
-
-
â2.0 mA
40
-
-
-
-
â0.3 mV
â0.6 â1.1 â1.8 V
â1.0 â1.5 â2.0 V
1.54 2.2
0.9 1.0
-
11
2.86 kΩ
1.1
-
pF
PDTB123E_SER_2
Product data sheet
Rev. 02 â 16 November 2009
© NXP B.V. 2009. All rights reserved.
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