PDTB123E Datasheet, PDF (6/10 Pages) NXP Semiconductors – PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

NXP Semiconductors
8. Package outline
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
3.1
1.3
2.7
1.0
3
0.6
0.2
4.2
3.6
0.45
0.38
3.0 1.7
2.5 1.3
1
1.9
Dimensions in mm
2
0.50
0.35
0.26
0.10
04-11-11
4.8
4.4
5.2
5.0
Dimensions in mm
0.48
0.40
1
2
2.54
3 1.27
14.5
12.7
04-11-16
Fig 5. Package outline SOT346 (SC-59A/TO-236)
Fig 6. Package outline SOT54 (SC-43A/TO-92)
4.2
3.6
3 max
4.8
4.4
5.2
14.5
5.0
12.7
Dimensions in mm
Fig 7. Package outline SOT54A
0.45
0.38
0.48
0.40
1
2
5.08
2.54
3
04-06-28
4.2
3.6
2.5
max
4.8
4.4
5.2
14.5
5.0
12.7
Dimensions in mm
0.45
0.38
1.27
0.48
0.40
1
2
2.54
3 1.27
05-01-10
Fig 8. Package outline SOT54 variant
2.5 1.4
2.1 1.2
3.0
2.8
3
1.1
0.9
0.45
0.15
1
1.9
Dimensions in mm
Fig 9. Package outline SOT23 (TO-236AB)
2
0.48
0.38
0.15
0.09
04-11-04
PDTB123E_SER_2
Product data sheet
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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