PDTB123E Datasheet, PDF (1/10 Pages) NXP Semiconductors – PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

PDTB123E series
PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTB123EK
SOT346
PDTB123ES^[1]
SOT54
PDTB123ET
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NPN complement
PDTD123EK
PDTD123ES
PDTD123ET
1.2 Features
„ Built-in bias resistors
„ Simplifies circuit design
„ 500 mA output current capability
„ Reduces component count
„ Reduces pick and place costs
„ ±10 % resistor ratio tolerance
1.3 Applications
„ Digital application in automotive and
industrial segments
„ Controlling IC inputs
„ Cost-saving alternative for BC807 series
in digital applications
„ Switching loads
1.4 Quick reference data
Table 2.
Symbol
V_CEO
I_O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ
-
-
-
-
1.54 2.2
0.9 1.0
Max Unit
−50 V
−500 mA
2.86 kΩ
1.1