PDTB123E Datasheet, PDF (5/10 Pages) NXP Semiconductors – PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

NXP Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
10³
h_FE
10²
10
006aaa353
(1)
(2)
(3)
−10^−1
V_CEsat
(V)
006aaa354
(1)
(2)
(3)
1
10^−1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10
006aaa355
V_I(on)
(V)
(1)
(2)
(3)
−1
−10^−2
−1
−10
−10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
−10
006aaa356
V_I(off)
(V)
(1)
(2)
(3)
−1
−10^−1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −0.3 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
−10^−1
−10^−1
−1
−10
I_C (mA)
V_CE = −5 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTB123E_SER_2
Product data sheet
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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